the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 2000 mos field effect transistor 2sK3326 switching n-channel power mos fet industrial use data sheet document no. d14204ej1v0ds00 (1st edition) date published march 2000 ns cp(k) printed in japan description the 2sK3326 is n-channel dmos fet device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, ac adapter. features low gate charge : q g = 22 nc typ. (v dd = 400 v, v gs = 10 v, i d = 10 a) gate voltage rating : 30 v low on-state resistance : r ds(on) = 0.85 w max. (v gs = 10 v, i d = 5.0 a) avalanche capability ratings isolated to-220(mp-45f) package absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 500 v gate to source voltage (v ds = 0 v) v gss(ac) 30 v drain current (dc) i d(dc) 10 a drain current (pulse) note1 i d(pulse) 40 a total power dissipation (t c = 25c) p t 40 w total power dissipation (t a = 25c) p t 2.0 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c single avalanche current note2 i as 10 a single avalanche energy note2 e as 10.7 mj notes 1. pw 10 m s, duty cycle 1 % 2. starting t ch = 25 c, v dd = 150 v, r g = 25 w , v gs = 20 v ? 0 v ordering information part number package 2sK3326 isolated to-220 (isolated to-220)
data sheet d14204ej1v0ds00 2 2sK3326 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit drain leakage current i dss v ds = 500 v, v gs = 0 v 100 m a gate to source leakage current i gss v gs = 30 v, v ds = 0 v 100 na gate to source cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 3.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 5.0 a 2.0 4.0 s drain to source on-state resistance r ds(on) v gs = 10 v, i d = 5.0 a 0.68 0.85 w input capacitance c iss 1200 pf output capacitance c oss 190 pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0 v, f = 1 mhz 10 pf turn-on delay time t d(on) 21 ns rise time t r 11 ns turn-off delay time t d(off) 40 ns fall time t f v dd = 150 v, i d = 5.0 a, v gs(on) = 10 v, r g = 10 w, r l = 60 w 9.5 ns total gate charge q g 22 nc gate to source charge q gs 6.5 nc gate to drain charge q gd v dd = 400 v, v gs = 10 v, i d = 10 a 7.5 nc body diode forward voltage v f(s-d) i f = 10 a, v gs = 0 v1.0v reverse recovery time t rr 0.5 m s reverse recovery charge q rr i f = 10 a, v gs = 0 v, di/dt = 50 a / m s 2.6 m c test circuit 3 gate charge v gs = 20 ? 0 v pg. r g = 25 w 50 w d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 w d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 t = 1 m s duty cycle 1 % t v gs wave form i d wave form v gs i d 10 % 0 0 90 % 90 % 90 % v gs(on) i d t on t off t d(on) t r t d(off) t f 10 %10 %
data sheet d14204ej1v0ds00 3 2sK3326 typical characteristics(t a = 25 c) figure1. derating factor of forward bias safe operating area 40 60 100 120 140 160 20 40 60 80 100 t c - case temperature - ?c dt - percentage of rated power - % 020 80 figure2. total power dissipation vs. case temperature 20 40 60 80 100 120 140 160 t c - case temperature - ?c p t - total power dissipation - w 0 50 40 30 20 10 figure3. forward bias safe operating area 100 10 0.1 10 100 1000 v ds - drain to source voltage - v i d - drain current - a 1 1 power dissipation limited 10 ms i d (dc) i d (pulse) 100 m s t c = 25 ?c single pulse pw = 10 m s 1ms r ds(on) limited (at v gs = 10 v) 100 ms figure4. drain current vs. drain to source voltage 0 4 8 12 16 v ds - drain to source voltage - v i d - drain current - a 20 10 pulsed v gs = 20 v 10 v 8.0 v v gs = 6.0 v figure5. drain current vs. gate to source voltage 0 v gs - gate to source voltage - v pulsed 100 10 0.0001 0.001 i d - drain current - a 0.01 0.1 1 51015 t a = C25 ?c 25 ?c 75 ?c 125 ?c
data sheet d14204ej1v0ds00 4 2sK3326 figure6. transient thermal resistance vs. pulse width 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 pw - pulse width - s r th (t) - transient thermal resistance - ?c/w t c = 25 ?c single pulse 0.01 r th(ch-c) = 3.2 ?c/w r th(ch-a) = 62.5 ?c/w figure7. forward transfer admittance vs. drain current 10 1 0.1 110 iy fs i - forward transfer admittance - s i d - drain current - a 0.01 0.01 100 0.1 t a = C25 ?c 25 ?c 75 ?c 125 ?c v ds = 10 v pulsed figure8. drain to source on-state resistance vs. gate to source voltage 10 15 20 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - w pulsed 25 05 0.0 2.0 1.0 i d = 10 a 5.0 a 2.0 a r ds(on) - drain to source on-state resistance - w 3.0 2.0 0 figure9. drain to source on-state resistance vs. drain current 0.1 10 i d - drain current - a 1 pulsed 1.0 100 v gs(off) - gate to source cut-off voltage - v 1.0 0.0 C50 0 50 100 150 200 t ch - channel temperature - ?c figure10. gate to source cut-off voltage vs. channel temperature 2.0 3.0 4.0 v ds = 10 v i d = 1 ma
data sheet d14204ej1v0ds00 5 2sK3326 figure11. drain to source on-state resistance vs. channel temperature 3.0 2.0 1.0 0.0 C50 0 50 100 150 v gs = 10 v t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - w i d = 10 a i d = 5.0 a figure12. source to drain diode forward voltage 10 1 0.5 0.1 1.5 v sd - source to drain voltage - v i sd - diode forward current - a pulsed 1.0 0.0 0.01 100 v gs = 0 v v gs = 10 v figure13. capacitance vs. drain to source voltage 1000 10 100 1 100 1000 v ds - drain to source voltage - v v gs = 0 v f = 1.0 mhz 10 10000 c iss 0.1 1 c oss c iss , c oss , c rss - capacitance - pf c rss figure14. switching characteristics 1000 100 10 t d(on) , t r , t d(off) , t f - switching time - ns 0.1 100 i d - drain current - a v dd = 150 v v gs = 10 v r g = 10 w t f t d(off) t d(on) 110 1 t r figure15. reverse recovery time vs. drain current 0 0.1 10 100 t rr - reverse recovery time - ns i f - drain current - a di/dt = 50 a/ m s v gs = 0 v 1 100 500 600 700 800 900 1000 400 300 200 10 52025 15 400 500 600 700 800 300 200 100 v ds v gs i d = 10 a v ds - drain to source voltage - v q g - gate charge - nc v gs - gate to source voltage - v figure16. dynamic input/output characteristics 14 12 10 8 6 4 2 v dd = 400 v 250 v 100 v 0 0
data sheet d14204ej1v0ds00 6 2sK3326 figure17. single avalanche energy vs starting channel temperature 16 14 12 10 8 6 4 2 0 25 e as - single avalanche energy - mj 50 75 100 125 i d(peak) = i as r g = 25 w v gs = 20 v ? 0 v v dd = 150 v 150 175 e as = 10.7 mj starting t ch - starting channel temperature - ?c figure18. single avalanche energy vs inductive load 100 10 1 i as - single avalanche energy - a i as = 10 a e as = 10.7 mj r g = 25 w v dd = 150 v v gs = 20 v ? 0 v starting t ch = 25 ?c l - inductive load - h 0.1 1 m 10 m 10 m 100 m
data sheet d14204ej1v0ds00 7 2sK3326 package drawing (unit: mm) isolated to-220(mp-45f) remark strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. equivalent circuit source body diode gate drain 1. gate 2. drain 3. source 10.00.3 3.20.2 2.70.2 1.30.2 0.70.1 2.54 2.54 1.50.2 123 40.2 13.5 min. 12.00.2 15.00.3 30.1 4.50.2 2.50.1 0.650.1
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